|M.Sc Student||Harush Eli|
|Subject||Photoelectrochemical Phenomena in Gallium Nitride|
|Department||Department of Chemical Engineering||Supervisors||PROF. Yaron Paz|
|PROFESSOR EMERITUS Yosef Salzman|
The III-N semiconductors, thanks to their wide and direct band gap, are ideal candidates for Opto-Electronic applications. However, the nitrides extremely high etch resistance, dry and wet etch methods are ineffective due to their low etch rates and structural damages. The wet photoelectrochemical etch technique is investigated.
In the work presented here, n-type GaN wafers were grown (by MOCVD) and characterized by the concentration and mobility of the charge carriers through the Hall method. Later, a gold stripes mask was deposited. The GaN samples were placed in KOH solution and illuminated by a He-Cd laser. The etch depth measurements, SEM pictures and the etch profile served as the etch characteristics.
In the described above experiments, it was found that: