הטכניון מכון טכנולוגי לישראלXyz
הטכניון מכון טכנולוגי לישראל - בית הספר ללימודי מוסמכים 
Ph.D and MS.c Theses, since 1988.


Advisor Professor Emeritus Bahir Gad
Advisor's Email bahir@ee.technion.ac.il
Advisor's Home-Site  
No of theses 30
Department Electrical Engineering
Department Web Site webee.technion.ac.il/hebrew


No.   Student's Name Graduation
Year
Degree Abstracts Research Name
 1 Matias Katz 2019 MSc Abstracts III-Nitrides Intersubband Based Quantum Cascade Detectors with Enhanced Performance by Optical Nano-Structur
 2 Liron Gantz 2018 PhD Abstracts Quantum Bits Utilizing the Quantum Dot Confined Bright and Dark Excitons
 3 Yulia Reizer 2016 MSc Abstracts Deterministic Positioning of a Single Quantum dot in a Pillar Microcavity
 4 Elad Gross 2013 MSc Abstracts Heterostructures Electro-Optics Properties of the III-Nitrides Material System
 5 Asaf Albo 2011 PhD Abstracts GaInAsN/(A1)GaAs Quantum-Well-Based Structures: Growth, Physical Properties and IR-Devices
 6 Alon Vardi 2011 PhD Abstracts Unipolar Electro-Optical Devices Based on Nanometric Structures in the III-N Material System
 7 Oren Shirak 2008 MSc Abstracts Silicon Nanowire Field Effect Transistors
 8 Bashir Zaknoon 2008 MSc Abstracts Investigation of Silicon Nanostructures by Scanning Probe Microscopy and Electron Spectroscopy
 9 Hagay Segal 2008 MSc Abstracts Light Transmission through 2D Structured Subwavelength Hole Arrays
 10 Alon Vardi 2006 MSc Abstracts Material and Device Characterization of GaN/AlN Quantum Dots
 11 Michael Girgel 2006 MSc Abstracts Effect of Material Properties on Performance in Hg1-xCdxTe based PV Infrared Photo-detectors
 12 Nimrod Shuall 2006 MSc Abstracts Optical and Electrical Characterization of In(Ga)As/InP Quantum Dots Layers and IR Devices
 13 Oded Katz 2005 PhD Abstracts Nitride Based Heterostructure Field-Effect Transistors for High-Frequency and High-Power Applications
 14 Adi Horn 2004 MSc Abstracts Design and Implementation of Heterostructure Field Effect Transistor on AlGaN/GaN
 15 Tal Raz 2004 PhD Abstracts Self Assembled Quantum Dots Grown on GaAs and InP Substrates by Metal Organic Molecular Beam Epitaxy
 16 Eyal Berkowicz 2002 PhD Abstracts Optical Properties of Nitride Quantum Structures
 17 Svetlana Luinetsky 2001 MSc
Characterization of High Speed GaAs Based Pseudomorphic Heterostructure Field Effect Transistor (HFET) with Strained InGaAs Channel
 18 Oded Katz 2001 MSc
The Implementation and Characterization of Schottky UV Photodetectors Based on Gallium Nitride and Aluminum Gallium Nitride
 19 Javier Groshaus 2001 MSc
Light Emission Mechanisms in InGaN MQW Laser Diodes
 20 Juri Guskov 2000 MSc
The Effect of Strain in Inp/ingaas Qwip on the Detector Operating Wavelength
 21 Aharon Gero 2000 MSc
Electronic, Optical and Electrical Properties of Quantum Well Infrared Photodetectors
 22 Shimon Maimon 1998 PhD
Quantum Well Infrared Photodetectors: Characterization, Analysis, and Implementation
 23 Yair Shemesh 1997 MSc
Delta-Doped Fet Devices for Microwave Monolithic Integrated Circuits
 24 Yigal Leiba 1997 MSc
Investigation of Electron Transport Parallel to the Layers Defining Gaas/algaas Quantum Structures Using Intersubband Transitions
 25 Dmitry Veinger 1996 MSc
Inp/ingaasp Epitaxial Growth in Mocvd System for Laser Application in Optical Communication. Comparison Between Selective and Regular Growth Methods.
 26 Amos Fenigstein 1996 PhD
Optical Intersubband Transitions in Type II Quantum Structures
 27 Armona Brandl 1994 MSc
Gaas/ Gaalas Quantum Well Ir Photo Detectors-Asymetric Struc
 28 Eliav Zipper 1993 MSc
Inp Passivation and Misfet Devices
 29 Susan Zachman 1992 MSc
Characterization of Deep Levels in Hgodte Junctions
 30 David Abraham 1990 MSc
Relations Between Model Parameters of Hemt Transistor and

Last updated on: Friday ,May 24, 2019