Ph.D and MS.c Theses, since 1988.
| Advisor | Prof. Emeritus Gad Bahir |
| Advisor's Email | bahir@ee.technion.ac.il |
| Advisor's Home-Site | |
| No of theses | 27 |
| Department | Electrical Engineering |
| Department Web Site | webee.technion.ac.il/hebrew |
No. |
Student's Name | Graduation Year  |
Degree | Abstracts | ResearchName |
|---|---|---|---|---|---|
| 1 | Elad Gross | 2013 | MSc | Abstracts | Heterostructures Electro-Optics Properties of the III-Nitrides Material System |
| 2 | Alon Vardi | 2011 | PhD | Abstracts | Unipolar Electro-Optical Devices Based on Nanometric Structures in the III-N Material System |
| 3 | Asaf Albo | 2011 | PhD | Abstracts | GaInAsN/(A1)GaAs Quantum-Well-Based Structures: Growth, Physical Properties and IR-Devices |
| 4 | Hagay Segal | 2008 | MSc | Abstracts | Light Transmission through 2D Structured Subwavelength Hole Arrays |
| 5 | Oren Shirak | 2008 | MSc | Silicon Nanowire Field Effect Transistors | |
| 6 | Bashir Zaknoon | 2008 | MSc | Abstracts | Investigation of Silicon Nanostructures by Scanning Probe Microscopy and Electron Spectroscopy |
| 7 | Nimrod Shuall | 2006 | MSc | Abstracts | Optical and Electrical Characterization of In(Ga)As/InP Quantum Dots Layers and IR Devices |
| 8 | Alon Vardi | 2006 | MSc | Abstracts | Material and Device Characterization of GaN/AlN Quantum Dots |
| 9 | Michael Girgel | 2006 | MSc | Abstracts | Effect of Material Properties on Performance in Hg1-xCdxTe based PV Infrared Photo-detectors |
| 10 | Oded Katz | 2005 | PhD | Abstracts | Nitride Based Heterostructure Field-Effect Transistors for High-Frequency and High-Power Applications |
| 11 | Tal Raz | 2004 | PhD | Abstracts | Self Assembled Quantum Dots Grown on GaAs and InP Substrates by Metal Organic Molecular Beam Epitaxy |
| 12 | Adi Horn | 2004 | MSc | Abstracts | Design and Implementation of Heterostructure Field Effect Transistor on AlGaN/GaN |
| 13 | Eyal Berkowicz | 2002 | PhD | Abstracts | Optical Properties of Nitride Quantum Structures |
| 14 | Svetlana Luinetsky | 2001 | MSc | Characterization of High Speed GaAs Based Pseudomorphic Heterostructure Field Effect Transistor (HFET) with Strained InGaAs Channel | |
| 15 | Oded Katz | 2001 | MSc | The Implementation and Characterization of Schottky UV Photodetectors Based on Gallium Nitride and Aluminum Gallium Nitride | |
| 16 | Javier Groshaus | 2001 | MSc | Light Emission Mechanisms in InGaN MQW Laser Diodes | |
| 17 | Aharon Gero | 2000 | MSc | Electronic, Optical and Electrical Properties of Quantum Well Infrared Photodetectors | |
| 18 | Juri Guskov | 2000 | MSc | The Effect of Strain in Inp/ingaas Qwip on the Detector Operating Wavelength | |
| 19 | Shimon Maimon | 1998 | PhD | Quantum Well Infrared Photodetectors: Characterization, Analysis, and Implementation | |
| 20 | Yair Shemesh | 1997 | MSc | Delta-Doped Fet Devices for Microwave Monolithic Integrated Circuits | |
| 21 | Yigal Leiba | 1997 | MSc | Investigation of Electron Transport Parallel to the Layers Defining Gaas/algaas Quantum Structures Using Intersubband Transitions | |
| 22 | Amos Fenigstein | 1996 | PhD | Optical Intersubband Transitions in Type II Quantum Structures | |
| 23 | Dmitry Veinger | 1996 | MSc | Inp/ingaasp Epitaxial Growth in Mocvd System for Laser Application in Optical Communication. Comparison Between Selective and Regular Growth Methods. | |
| 24 | Armona Brandl | 1994 | MSc | Gaas/ Gaalas Quantum Well Ir Photo Detectors-Asymetric Struc | |
| 25 | Eliav Zipper | 1993 | MSc | Inp Passivation and Misfet Devices | |
| 26 | Susan Zachman | 1992 | MSc | Characterization of Deep Levels in Hgodte Junctions | |
| 27 | David Abraham | 1990 | MSc | Relations Between Model Parameters of Hemt Transistor and |
Last updated on: Thursday ,May 23, 2013