טכניון מכון טכנולוגי לישראל
הטכניון מכון טכנולוגי לישראל - בית הספר ללימודי מוסמכים  
M.Sc Thesis
M.Sc StudentDyskin Aleksey
SubjectA Millimeter Wave Broadband, Low Noise and High Gain
Integrated Receiver Front-end Based on GaAs
Metamorphic HEMTs
DepartmentDepartment of Electrical Engineering
Supervisor Professor Dan Ritter
Full Thesis textFull thesis text - English Version


Abstract

Developments in millimeter wave radio systems have given rise to a strong demand for low-noise RF front-end monolithic millimeter wave integrated circuits with high gain, large bandwidth and low noise figure. Usually an RF front-end comprises a transmit/receive (T/R) switch for toggling the antenna set between receiving or transmitting path, and low noise amplifier that sets the overall noise performance of the receiving path. In particular, broadband RF front-ends, covering several electromagnetic spectral bands, are key elements for radiometry, communications and instrumentation uses. In this research we report broadband RF front-end that makes use of common source low noise amplifier, avoiding common broadband techniques that affect important performance factors of the front end, and two proposed topologies for broadband switches. All presented circuits are realized in state-of-the-art GaAs-based metamorphic high electron mobility transistor technology with a gate length of 100 nm. Full design cycles including the RF characterization at high millimeter-wave frequencies were performed in the frame of this thesis.

The research consists of two stages. The first stage focuses on the design of the broadband low noise amplifier with sufficient gain and good noise figure, avoiding the travelling wave technique. The second stage focuses on researching and designing 2 topologies of transmitting/receiving switch and combining the switch and the amplifier together to demonstrate the broadband, low noise and high gain performance. The aspects like architecture, performance, stability and others were studied during the research.

The research was done in the Faculty of Electrical Engineering and Microelectronics Research Center, Technion - Israel Institute of technology, in collaboration with Fraunhofer -Institute for Applied Solid State physics (IAF), Freiburg, Germany.