Subject: Subject Sylbus: Electron. Devices 1 (Mos) - 044231 (Current)

Electron. Devices 1 (Mos) - 044231
Credit
Points
4.0
 
Given In
Semester
a
 
  Lecture Exercise Laboratory Project or
Seminar
House
Work
Weekly
Hours
2 1 2    

Determination of the grade according to progress during the semester and a final examination.


Prerequisites: Basics of Semiconductor Devices M 044125
 
Linked Courses: Linear Electronic Circuits 044142


M os Capacitor: the Characteristics of Ideal and Non Ideal Mos Capacitor. the Srh Recombination-Generation Model and Surface Recombination Velocity. Deep Depletion and Transients, Life-Time Measurement and Zerbst Analysis. Quasi-Equilibrium Fermi Levels and a Surface Controlled Mos Structure. Mos Transistors: Dc Characteristics of Four Terminal Transistor, Depletion-Most and Jfet. Technology of Four Terminal Transistor, Depletion-Most and Jfet. Technology of Fabrication of Transistors, Processes and Masks. Polysilicon Gate Technology Compared with Metal Gate Technology. Control of Threshold Voltage through Ion Implantation. Frequency and Small Signal Properties of Mos Transistors. the Applications for Special Most Devices Such as Cmos, Vmos, Dmos. Digital and Analog Devices. Charge-Coupled-Devices: the Physical Principles of Sccd and Bccdk: Technology and Limitations. Examples for Electro-Optical Applications and Signal Processing.


הערות
פגישות מעבדה - בתאום עם המדריכים:
מליץ מריה, בושר שלמה, כהן-אזרזר דנה,
יפה צח
מתרגל : יפה צח
ת. בית : כהן-אזרזר דנה




Times and places of examinations 01/2017 2017/2018 Winter Semester
examination timedaydateSeason
 Thursday08.02.2018א
 Monday12.03.2018ב

Timetable to semester 01/2017 2017/2018 Winter Semester
RoomBuildingHourdayLecturerExercise
Lecture
no.Registering
Group
351בנ.מאייר08:30-10:30MondayDoctor Kornblum LiorLecture1011
     Laboratory11
351בנ.מאייר10:30-11:30Monday Exercise11
 
    Doctor Kornblum LiorLecture6069
     Laboratory69
     Exercise69

Created in 21/11/2017 Time 06:08:57