Subject: Subject Sylbus: Electron. Devices 1 (Mos) - 044231 (Current)

Electron. Devices 1 (Mos) - 044231
Credit
Points
4.0
 
Given In
Semester
a
 
  Lecture Exercise Laboratory Project or
Seminar
House
Work
Weekly
Hours
2 1 2    

Determination of the grade according to progress during the semester and a final examination.


Prerequisites: Basics of Semiconductor Devices M 044125
 
Linked Courses: Linear Electronic Circuits 044142


MOs Capacitor: the Characteristics of Ideal and Non Ideal Mos Capacitor. the Srh Recombination-Generation Model and Surface Recombination Velocity. Deep Depletion and Transients, Life-Time Measurement and Zerbst Analysis. Quasi-Equilibrium Fermi Levels and


הערות
פגישות מעבדה - בתאום עם המדריכים




Times and places of examinations 01/2017 2017/2018 Winter Semester
examination timedaydateSeason
 Thursday08.02.2018א
 Monday12.03.2018ב

Timetable to semester 01/2017 2017/2018 Winter Semester
RoomBuildingHourdayLecturerExercise
Lecture
no.Registering
Group
351בנ.מאייר08:30-10:30MondayDoctor Kornblum LiorLecture1011
     Laboratory11
351בנ.מאייר10:30-11:30Monday Exercise11

Created in 25/09/2017 Time 01:57:53