Subject: Subject Sylbus: Electron. Devices 1 (Mos) - 044231

Electron. Devices 1 (Mos) - 044231
Credit
Points
4.0
 
Given In
Semester
a
 
  Lecture Exercise Laboratory Project or
Seminar
House
Work
Weekly
Hours
2 1 2    

Determination of the grade according to progress during the semester and a final examination.


Prerequisites: Basics of Semiconductor Devices M 044125
 
Linked Courses: Linear Electronic Circuits 044142


Mos Capacitor: the Characteristics of Ideal and Non Ideal Mos Capacitor. the Srh Recombination-Generation Model and Surface Recombination Velocity. Deep Depletion and Transients, Life-Time Measurement and Zerbst Analysis. Quasi-Equilibrium Fermi Levels and a Surface Controlled Mos Structure. Mos Transistors: Dc Characteristics of Four Terminal Transistor, Depletion-Most and Jfet. Technology of Four Terminal Transistor, Depletion-Most and Jfet. Technology of Fabrication of Transistors, Processes and Masks. Polysilicon Gate Technology Compared with Metal Gate Technology. Control of Threshold Voltage through Ion Implantation. Frequency and Small Signal Properties of Mos Transistors. the Applications for Special Most Devices Such as Cmos, Vmos, Dmos. Digital and Analog Devices. Charge-Coupled-Devices: the Physical Principles of Sccd and Bccdk: Technology and Limitations. Examples for Electro-Optical Applications and Signal Processing.




System of hours to the semesters
Semester Previous Semester information 01/2017 2017/2018 Winter Semester

Created in 25/02/2018 Time 05:34:36